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Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

Sunde, Tor Olav Løveng; Lindgren, Mikael; Mason, TO; Einarsrud, Mari-Ann; Grande, Tor
Journal article, Peer reviewed
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195. Sunde et al., Dalton Trans. 43 (2014) 9620-9632.pdf (Restricted access.)
Permanent link
http://hdl.handle.net/11250/284781
Issue date
2014-05-07
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Original version
Dalton Transactions 2014, 43(25):9620-9632   10.1039/c4dt00850b
Abstract
Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have

attracted recent interest due to their unique optical properties. Here we report on the

synthesis of the transparent conducting oxides (TCOs) indium oxide and indium tin oxide

(ITO) doped with neodymium, europium and terbium. The solid solubility in the systems

was investigated and isothermal phase diagrams at 1400 °C were proposed. The solubility of

the REEs in In2O3 is mainly determined by the size of the rare earth dopant, while in ITO the

solid solubility was reduced due to a strong tendency of the tin and REE co-dopants to form

a pyrochlore phase. The effect of the REE-doping on the conductivity of the host was

determined and optical activity of the REE dopants were investigated in selected host

materials. The conductivity of sintered materials of REE-doped In2O3 was significantly

reduced, even at small doping concentrations, due to a decrease in carrier mobility. The

same decrease in mobility was not observed in thin films of the material processed at lower

temperatures. Strong emissions at around 611 nm were observed for Eu-doped In2O3,

demonstrating the possibility of obtaining photoluminescence in a TCO host, while no

emissions was observed for Nd- and Tb-doping.
Publisher
Royal Society of Chemistry
Journal
Dalton Transactions

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