Wafer level integration of epitaxial piezoelectric thin films for novel NEMS, MEMS and MOEMS applications
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Original versionAdvanced Materials: TechConnect Briefs 2017 : 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference; Washington; United States; 14 May 2017 through 17 May 2017, 55-58
Pb(Zr, Ti)O3 (PZT) and (PhMg1/3Nb2/3O3)2/3-CPbTiO3)1/3 (PMN-PT) thin films are epitaxially deposited on 200 mm wafers using Solmates' Pulsed Laser Deposition (PLD) platform. Epitaxy is achieved using an optimized TiN template layer on the lattice mismatched silicon. SrTiO3 was used as buffer layer and LaNiO3 as oxide bottom electrode after which PZT and PMN-PT were deposited. A fully epitaxial thin film stack was confirmed by XRD analysis and the degree of epitaxy was found to be homogeneous across the wafer. The ferro- and piezoelectric properties were measured and found to be stable upon 103 switching cycles.