• English
    • norsk
  • English 
    • English
    • norsk
  • Login
View Item 
  •   All institutions
  • SINTEF
  • Publikasjoner fra CRIStin
  • Publikasjoner fra CRIStin - Stiftelsen SINTEF
  • View Item
  •   All institutions
  • SINTEF
  • Publikasjoner fra CRIStin
  • Publikasjoner fra CRIStin - Stiftelsen SINTEF
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Etching Burried Oxide at the Bottom of High Aspect Ratio Structures

Summanwar, Anand; Lietaer, Nicolas
Chapter
Thumbnail
View/Open
SINTEF+S22581.pdf (584.8Kb)
Permanent link
http://hdl.handle.net/11250/2430445
Issue date
2011
Share
Metadata
Show full item record
Collections
  • SINTEF Digital [1048]
  • Publikasjoner fra CRIStin - Stiftelsen SINTEF [1766]
Original version
MME 2011: Proceedings of the 22nd Micromechanics and microsystems technology Europe workshop: 19-22 June 2011 Tønsberg, Norway  
Abstract
Plasma based dry etching is a key process widely used in micro-fabrication today. In this article, we look at the challenges involved in the anisotropic etching of buried SiO2 layers at the bottom of high aspect ratio structures on SOI wafers. We present our etch results that show the limitations of using a process with radio frequency (RF) substrate bias. This is followed by results obtained with a newly developed dielectric etch process based on a pulsed low frequency (LF) bias which makes it possible to etch through even relatively thick buried oxide layers. Finally we present an application in which this newly developed process was used.

Contact Us

Search NORA
Powered by DSpace software

Service from BIBSYS
 

 

Browse this CollectionIssue DateAuthorsTitlesSubjectsDocument TypesJournalsBrowse all ArchivesArchives & CollectionsIssue DateAuthorsTitlesSubjectsDocument TypesJournals

My Account

Login

Statistics

Google Analytics StatisticsView Usage Statistics

Contact Us

Search NORA
Powered by DSpace software

Service from BIBSYS