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Electron Microscopy Based Characterization of Semiconductor Nanowires

Fauske, Vidar Tonaas
Doctoral thesis
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http://hdl.handle.net/11250/2396888
Issue date
2016
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  • Institutt for fysikk [1077]
Abstract
One-dimensional semiconductor structures have attracted a large research interest,

mainly for the purpose of novel or improved opto-electronic properties and

applications. In this work, semiconductor nanowires grown using the vapor-liquidsolid

method are characterized using electron microscopy based techniques, in order

to understand and improve nanowire synthesis and nanowire-based devices.

Methods and tools have also been developed to improve and expedite such characterizations.

One area of focus in the work has been on nanowire interfaces, especially the

interface between GaAs nanowires and graphene substrates. Here, the symmetry

and lattice mismatch have been considered, and the consequences this has on

nanowire epitaxy on graphene. In addition, the study has focused on in situ characterization

of nanowires and their interfaces, both in focused ion beam systems

and in electron microscopes, with the goal of correlating the functional properties

with the observed composition and structural features. Here, both the electrical

properties of the nanowires and the dynamic behavior under heat-treatment have

been studied.

The main findings of the work include the proof of GaAs nanowire growth directly

on few-layer graphene, as well as the quantitative description of the solid

state replacement of GaAs nanowires by Au during heat-treatment. Additionally,

techniques to characterize the mechanical and electrical characteristics of the

nanowire–substrate interface have been further developed. Large contributions to

collaborative, open source analysis software have also been made. These developed

tools were essential for obtaining more informative results from the experimental

data.
Publisher
NTNU
Series
Doctoral thesis at NTNU;2016:181

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