Investigating thermal donors in n-type Cz silicon with carrier density imaging
Journal article, Peer reviewed
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OriginalversjonAIP Advances 2012, 2(3) 10.1063/1.4754276
A new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images of a silicon wafer before and after growth of thermal donors. For comparison, free carrier density mapping is also performed using the resistivity method together with linear interpolation. Both methods reveal the same distribution of thermal donors indicating that the carrier density imaging technique can be used to map thermal donor concentration. The interstitial oxygen concentration can also be extracted using the new method in combination withWijaranakula’s model. As part of this work, the lifetime at medium injection level is correlated to the concentration of thermal donors in the as-grown silicon wafer. The recombination rate is found to depend strongly on the thermal donor concentration except in the P-band region.