Compact Modeling Solutions for Advanced Semiconductor Devices
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To meet the ever increasing demand for performance and speed from integrated circuits, new device architectures as well as devices based on new materials are being proposed. To enable circuit design with these novel devices, accurate, analytical and robust simulation models are required. We present such simulation models for Gallium Nitride (GaN) based high electron mobility transistors (HEMTs), Gallium Arsenide (GaAs) based HEMTs, ultra-thin body silicon-on-insulator metal-oxide-semiconductor field effect transistors (UTBSOI MOSFETs) and high voltage silicon MOSFETs. Physics-based current and charge models for GaN, GaAs HEMTs and UTBSOI MOSFETs are presented. Analytical solutions for complex device equations are developed to derive the core models. A plethora of important real device phenomena are also modelled to represent a practical device. The models are verified by comparing them with experimental data and are shown to pass various bench-mark tests demonstrating their convergence and physical behaviour. The developed models are also used to analyse the effects of various physical parameters on the performance of the device. In addition, a model for the pulse-width and duty-cycle dependence of safeoperating- area of high voltage silicon MOSFETs is also presented. This modeling methodology enables the circuit designers to utilise the full potential of high voltage devices.